Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-05T06:17:59.951Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Excimer Laser Fluence Gradient on Lateral Grain Growth in Crystallization of a-Si Thin Films

Published online by Cambridge University Press:  14 March 2011

Minghong Lee ,
Seungjae Moon ,
Mutsuko Hatano ,
Kenkichi Suzuki  and
Costas P. Grigoropoulos
Minghong Lee
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, U.S.A.
Seungjae Moon
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, U.S.A.
Mutsuko Hatano
Affiliation:
Hitachi Laboratory, Hitachi Ltd., Tokyo 185-8601, JAPAN
Kenkichi Suzuki
Affiliation:
Electron Tube & Devices Division, Hitachi Ltd., Mobara 297, JAPAN
Costas P. Grigoropoulos
Affiliation:
Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, U.S.A.
Get access

Abstract

In order to clarify the relationship between excimer laser fluence gradient and the length of lateral grain growth, the laser fluence is modulated by a beam mask. The fluence distribution is measured by using a negative UV photoresist. The lateral growth length and the grain directionality are improved with increasing fluence gradient. Lateral growth length of about 1.5 [.proportional]m is achieved by using a single laser pulse without substrate heating on a 50 nm-thick a-Si film by enforcing high fluence gradient. Electrical conductance measurement is used to probe the solidification dynamics. The lateral solidification velocity is found to be about 7 m/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q7.6.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kuriyama, H., Honda, T., and Hakano, S., Jpn. J. Appl. Phys. 32, 6190 (1993).Google Scholar
2. Im, J. S., Kim, H. J., Appl. Phys. Lett. 63, 1969 (1993).Google Scholar
3. Im, J. S., Sposili, R. S., and Crowder, M. A., Appl. Phys. Lett. 70, 3434 (1997).Google Scholar
4. Ishikawa, K., Ozawa, M., Ho, C.-H., and Matsumura, M., Jpn. J. Appl. Phys., Part 1 37, 731 (1998).Google Scholar
5. Kim, H. J., and Im, J. S., Appl. Phys. Lett. 68, 1513 (1996).Google Scholar
6. Oh, C.-H., Ozawa, M., and Matsumura, M., Jpn. J. Appl. Phys., Part2 37, L492 (1998).Google Scholar
7. Rezek, B., Nebel, C. E., and Stutzmann, M., Jpn. J. Appl. Phys., Part 2 38, L1083 (1999).Google Scholar
8. Takahashi, M., Ogino, T., Suzuki, K., Hayashi, N., and others, J. of Photopolymer Sci. and Tech. 12, No. 1, 89 (1999).Google Scholar
9. Galzov, V. M., Chizhevskays, S. N., and Glagoleva, N. N., Liquid Semiconductors (Plenum, New York, 1969).Google Scholar
10. Hatano, M., Moon, S., Lee, M., Suzuki, K., and Grigoropoulos, C. P., J. Appl. Phys. 87, No. 1, 36 (2000).Google Scholar