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Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si

Published online by Cambridge University Press:  03 September 2012

V. Krishnamoorthy ,
D. Venables ,
K. Moeller ,
K. S. Jones  and
B. Freer
V. Krishnamoorthy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
D. Venables
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
K. Moeller
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
K. S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
B. Freer
Affiliation:
EATON Corporation, Beverly, MA
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Abstract

(001) CZ silicon wafers were implanted with arsenic (As+) at energies of 10–50keV to doses of 2×1014 to 5×1015/cm2. All implants were amorphizing in nature. The samples were annealed at 700°C for 16hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 21
Copyright
Copyright © Materials Research Society 1997

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References

[1] Nobili, D., Solmi, S., Parsini, A., Derdour, M., Armigliato, A. and Moro, L., Phys. Rev. B, 49 (4), 2477 (1994).Google Scholar
[2] Kim, Y., Massoud, H.Z. and Fair, R.B., J. of Electronic Materials, 18 (2), 143 (1989).Google Scholar
[3] Armigliato, A. and Parsini, A., J. Mater. Res., 6 (8), 1701 (1991).Google Scholar
[4] Armigliato, A., Parsini, A., Derdour, M., Lazzari, P., Moro, L., Nobili, D. and Solmi, S., Solid State Phenomena, 19 & 20, 393 (1991).Google Scholar
[5] Parsini, A., Nobili, D., Armigliato, A., Derdour, M., Moro, L. and Solmi, S., Appl. Phys. A, 54, 221 (1992).Google Scholar
[6] Said, J., Jaouen, H., Ghibaudo, G. and Stoemenos, I., Phys. Stat. Sol. A, 117, 99 (1990).Google Scholar
[7] Parsini, A., Bourret, A., Armigliato, A., Servidori, M., Solmi, S., Fabbri, R., Regnard, J. R. and Allain, J. L., J. Appl. Phys., 67 (5), 2320 (1990).Google Scholar
[8] Rousseau, P. M., Griffin, P. B. and Plummer, J. D., Appl. Phys. Lett., 65 (5), 578 (1994).Google Scholar
[9] Hsu, S. N. and Chen, L. J., Nuclear Instruments and Methods, B 55, 620 (1991).Google Scholar
[10] Hsu, S. N. and Chen, L. J., Appl. Phys. Lett., 55 (22), 2304 (1989).Google Scholar