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Effect of End-of-Range Defects, Arsenic Clustering and Precipitation on Transient Enhanced Diffusion in As+ Implanted Si

Published online by Cambridge University Press:  15 February 2011

V. Krishnamoorthy ,
D. Venables ,
K. Moeller ,
K. S. Jones  and
J. Jackson
V. Krishnamoorthy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
D. Venables
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
K. Moeller
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
K. S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J. Jackson
Affiliation:
EATON Corp.
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Abstract

(001) CZ silicon wafers were implanted with As at lOOkeV to a dose of 1×1015/cm2. The implant was amorphizing in nature and the peak As concentration was below the As clustering threshold. Subsequently, a second As+or Ge+ implant at 30keV at doses of 2×1015/cm2, 5×1015/cm2 and 1×1016/cm2 were performed, respectively, into the as-implanted samples. The samples with a double arsenic implant induce As clustering at the lower doses and As precipitation at the highest dose at the projected range. However, the samples with the Ge do not induce clustering or precipitation. The samples were annealed at 700°C for various times to regrow the amorphous layer and to cause enhanced arsenic diffusion beyond the end-of range region. These samples wereanalyzed by SIMS and TEM. The difference in the defect evolution at the end-of-range region and TED beyond the end-of-range region between the As and Ge implanted samples was used to isolate the effects of As clustering and precipitation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 401
Copyright
Copyright © Materials Research Society 1997

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References

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