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Effect of Electron Irradiation and Excess Cd on Ion-Assisted Doping of p-CdTe Thin Films

Published online by Cambridge University Press:  03 September 2012

D. Kim ,
A. L. Fahrenbruch ,
A. Lopez-Otero  and
R. H. Bube
D. Kim
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, California 94305–2205
A. L. Fahrenbruch
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, California 94305–2205
A. Lopez-Otero
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, California 94305–2205
R. H. Bube
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, California 94305–2205
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Abstract

Ion-assisted doping of homoepitaxial p-CdTe films with low energy P ions (20 eV) deposited by vacuum evaporation has been investigated. In order to control the properties of the films, we applied low energy electron irradiation and Cd overpressure during the growth. We report the results of measurements of hole density, spectral response of Cr/p-CdTe Schottky barriers (to estimate the minority carrier diffusion length Lj). From Ld, we have found that the quality of the films is dependent on both the ion dose and the ion energy. By reducing the ion energy to 20 eV and applying electron irradiation and Cd overpressure, p-CdTe films with p = 1 × 10 17 cm−3 and Lp =0.35 μm were obtained. A p-CdTe film with p = 1016 cm−3 was obtained with a low ion energy of 10eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 187
Copyright
Copyright © Materials Research Society 1992

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References

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