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Effect of Electric Field on Metal Induced Lateral Crystallization of Amorphous Silicon

Published online by Cambridge University Press:  15 March 2011

Shivani Singla ,
M.C. Poon ,
M. Chan ,
M. Qin ,
W.Y. Chan ,
C.Y. Yuen ,
P.K. Ko  and
H. Wong
Shivani Singla
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M.C. Poon*
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M. Chan
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M. Qin
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
W.Y. Chan
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
C.Y. Yuen
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
P.K. Ko
Affiliation:
Dept. of Electrical and Electronic Engineering, Hong Kong University of Science & Technology, Sai Kung, Hong Kong
H. Wong
Affiliation:
Dept. of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong
*
corresponding author: Tel: (852)2358-7047, Fax:(852)2358-1485, e-mail:[email protected]
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Abstract

The effects of electric field on the rate of metal induced lateral crystallization (MILC) of amorphous silicon were investigated. Nickel silicide, which is known to be a key species for the low temperature crystallization, was driven by an electric field. As a result, the crystallization velocity of EMILC was much faster than that of conventional MILC methods. Directional crystallization of amorphous silicon thin film was successfully achieved by applying a DC field during heat treatment. The crystallization was performed at different temperatures (500-625°) by employing a thin layer of nickel (30°). The directionality of the resulting crystallization depended on the polarity of the electric field. The lateral crystallization velocity was three to four times faster than MILC when an electric field of 53.5V/cm was applied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 587: Symposium O – Substrate Engineering - Paving the Way to Epitaxy , 1999 , O8.5
Copyright
Copyright © Materials Research Society 2000

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References

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