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Effect of Doping on the Growth of InGaP by Low Pressure Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

C.H. Wu ,
M.S. Feng  and
C.C. Wu
C.H. Wu
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu
M.S. Feng
Affiliation:
Institute of Materials Science & Engineering, National Chiao Tung University, Hsinchu
C.C. Wu
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C
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Abstract

A study of the effect of dopant incorporation on the growth of InGaP by low pressure metalorganic chemical vapor deposition has been performed, in which diethylzinc (DEZn) and H2Se are used as p and n-type doping sources, respectively. The enhancement of interdiffusion, i.e., the disordering of a InGaP layer has been observed due to the introduction of Zn into the growth layer, as indicated by the decrease of intensity of the extra spots on TEM diffraction results. In addition, streaky and wavy diffraction pattern for Se-doped layer reveals the formation of anti-phase domains on a growth layer. According to PL measurement, the emission energy of the grown layer is a function of doping concentration, for which the energy shift as high as 141 meV has been obtained at heavily zinc doping concentration. Therefore, by varying the doping concentration, energy shift can be controlled, providing a potential for its application in optical devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 477
Copyright
Copyright © Materials Research Society 1993

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References

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