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Effect Of μ-Doped Compensated Material on Stability of a-Si:H Solar Cells

Published online by Cambridge University Press:  10 February 2011

D. Caputo
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering via Eudossiana 18, 00184 Rome (Italy)
G. De Cesare
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering via Eudossiana 18, 00184 Rome (Italy)
F. Palma
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering via Eudossiana 18, 00184 Rome (Italy)
M. Tucci
Affiliation:
University of Rome “La Sapienza”, Department of Electronic Engineering via Eudossiana 18, 00184 Rome (Italy)
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Abstract

In this paper we focus our attention on compensated materials with μ-doping concentration in order to obtain a stable intrinsic layer with initial high photoconductivity suitable for p-i-n solar cells. Films were grown from a mixture of undiluted silane, hydrogen diluted phosphine and hydrogen diluted diborane. Values of dark conductivity around 10-11 Ω-1cm-1 and photosensitivity ratio under AM 1.5 of 6 orders of magnitude have been obtained for phosphine/diborane ratio around 102. The difference between the two dopant concentrations is in agreement with the difference in doping efficiency of the two gases found in the characterization of single μ-doped films.

We compared the degradation behavior of compensated and intrinsic materials with the same initial dark and light conductivity. After about 20 h the photoconductivity of the compensated and the intrinsic material decreased of 33% and 70%, respectively. The space of investigable deposition parameters has been limited by the stress induced by the simultaneous presence of phosphine and diborane which leads to a macroscopic, periodic and regular damage of the film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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