Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T18:48:06.189Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of different annealing procedures on the microstructure and the electrical properties of CSD derived (Ba,Sr)TiO3 thin films.

Published online by Cambridge University Press:  28 July 2011

Sandip Halder ,
Theodor Schneller  and
Rainer Waser
Sandip Halder
Affiliation:
Institute für Werkstoffe der Elektrotechnik- II, RWTH Aachen, Germany
Theodor Schneller
Affiliation:
Institute für Werkstoffe der Elektrotechnik- II, RWTH Aachen, Germany
Rainer Waser
Affiliation:
Institute für Werkstoffe der Elektrotechnik- II, RWTH Aachen, Germany Institut für Festkoerperforschung, Forchungzentrum Juelich, Juelich, Germany
Get access

Abstract

Processing of BST thin films is becoming more and more important for microwave electronics and for its probable incorporation in future high density DRAM's. A co-relation between processing and final device characteristics is of utmost importance. Differences in microstructure and electrical properties were observed when chemical solution deposited thin films were annealed using a conventional diffusion furnace, rapid thermal annealing furnace with different heating ramps, and a hot plate for pyrolysis prior crystallization. The solution was made with the propionate route and then deposited on Pt coated silicon wafers. Cross-sectional SEM's were performed on the different films. It was found that the microstructure depended on the annealing method of the film. The electrical properties of the films were also found to vary considerably. Frequency dependence of the dielectric constant was studied. The leakage study on different films was performed at different temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D3.30
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Keuls, F.W., Romanovsky, R.R., Bohman, D.Y., Winters, M.D., Miranda, F.A., Mueller, C.H., Treece, R.E., Rivkin, T.V. and Galt, D., Appl. Phys. Lett. 71, 3075 (1991).Google Scholar
2. Kotecki, D. E., Baniecki, J. D., Shen, H., and Athavale, S. D., IBM J. Res. Dev. 43(3), 367 (1999).Google Scholar
3 Levin, I., Leapman, R.D. and Kaiser, D. L., J. Mater. Res. 15(7) 1433 (2000).Google Scholar
4. Saha, S. and Krupanidhi, S.B., J. Appl. Phys. 87, 849 (2000).Google Scholar
5. Schwartz, R.W., Schneller, T. and Waser, R., Comptes Rendus Chimie (accepted)Google Scholar
6. Hoffmann, S. and Waser, R., J. Europ. Ceram. Soc. 19, 1339 (1999).Google Scholar
7 Gust, M. C., Momoda, L. A., and Mcartney, M. L., Mater. Res. Soc. Symp. Proc. 346, 649 (1994).Google Scholar
8. Fatuzzo, E., and Merz, W. J., Selected Topics in Solid State Physics, Vol VII., edited by Wohlfarth, E.P. (North- Holland Publishing Company, Amsterdam, 1967).Google Scholar
9. Dietz, G. W., and Waser, R., Thin Solid Films 299, 53 (1997).Google Scholar
10. Hwang, C. S., Lee, B. T., Kang, C. S., Kim, J. W., Lee, K. H., Cho, H.-J., Horii, H., Kim, W. D., Lee, S. In, Roh, Y. B., and Lee, M. Y., J. Appl. Phys. 83, 3703 (1998).Google Scholar
11. Hwang, C. S., Lee, B. T., Kang, C. S., Kim, J. W., Lee, K. H., Cho, H.-J., Horii, H., Kim, W. D., Lee, S. In, Roh, Y. B., and Lee, M. Y., J. Appl. Phys. 83, 3703 (1998).Google Scholar
12. Dietz, G.W., Schumacher, M., Waser, R., Streiffer, S.K.,Basceri, C. and Kingon, A.I., J. Appl. Phys. 82, 2359 (1997).Google Scholar