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Effect of Deposition-Induced Annealable Defects on Light-Induced Defect Generation in a-Si:H

Published online by Cambridge University Press:  01 January 1993

Jong-Hwan Yoon
Jong-Hwan Yoon*
Affiliation:
Department of Physics, College of Natural Science, Kangwon National University, Chunchon, Kangwon-Do 200-701, Korea
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Abstract

In this paper we present a method to determine the annealable defect density(ΔNann) present in hydrogenated amorphous silicon(a-Si:H). The effects of the annealable defects on the light-induced defect generation rate, saturated defect density (Nsat) and the change of defect density in the light-induced saturated state(ΔNsat) have been studied. Annealable defect density was varied by depositing samples at various substrate temperatures or by post-growth anneals of samples grown at low substrate temperatures. It is found that the generation rate, N satand ΔNsat are well correlated with ΔNann. In particular, the ΔNsat is found to follow a relation ΔNsat ≈ ΔNann. These results suggest that defect-related microscopic models are appropriate for light-induced metastability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 565
Copyright
Copyright © Materials Research Society 1993

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References

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