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The Effect of Defects and Dopants on Thermal Conduction in GaN Films

Published online by Cambridge University Press:  01 February 2011

J. Zou ,
D. Kotchetkov ,
A.A. Balandin ,
D.I. Florescu  and
F.H. Pollak
J. Zou
Affiliation:
Physics Department, Brooklyn College of the City University of New York, Brooklyn, NY 11210
D. Kotchetkov
Affiliation:
Department of Electrical Engineering, University of California at Riverside, Riverside, CA 92521 U.S.A.
A.A. Balandin*
Affiliation:
Department of Electrical Engineering, University of California at Riverside, Riverside, CA 92521 U.S.A.
D.I. Florescu
Affiliation:
Emcore Corporation, 145 Belmont Drive, Somerset, NJ 08873
F.H. Pollak
Affiliation:
Physics Department, Brooklyn College of the City University of New York, Brooklyn, NY 11210
*
1Corresponding author; electronic address: [email protected]
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Abstract

We present a theoretical investigation of the effects of dislocations, impurities and dopants on the thermal conductivity of GaN layers. It is shown that the experimentally observed decrease of the room-temperature thermal conductivity with increasing doping density is a result of enhanced phonon relaxation on silicon dopant atoms. Scattering of acoustic phonons on free carriers plays a relatively minor role in GaN. The functional dependence of the thermal conductivity on doping density is in good agreement with experiment. A developed model can be used for thermal budget calculation in high-power density GaN devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.25
Copyright
Copyright © Materials Research Society 2002

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References

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