Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T01:47:02.725Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Cu on Al Interfacial Mass Transport in Bamboo Rie and Damascene Al(Cu)

Published online by Cambridge University Press:  10 February 2011

J. Proost ,
H. Li ,
A. Witvrouw  and
K. Maex
J. Proost
Affiliation:
also at ESA T-INSYS, K. U. Leuven
H. Li
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Witvrouw
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
also at Dept. of Materials Science (MTM), de Croylaan 2, B-3001 Leuven, Belgium
Get access

Abstract

In this work, the electromigration (EM)-behaviour of bamboo RIE and damascene Al(Cu) interconnects has been studied by drift experiments. For RIE lines, both lattice and interface EM can be operative, depending on the Cu-distribution. Cu-alloying only retains its retarding effect for Al-diffusion at metallic interfaces, while the accompanying presence of an incubation time was found to become rate-controlling for the EM-performance at operating conditions. Contrary to the case of polycrystalline lines, the higher EM-threshold still observed for bamboo damascene relative to RIE is now insufficient to compensate for the significantly increased Cudepletion rate in bamboo damascene due to both geometrical and metallurgical reasons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 91
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Hu, C.-K., Thin Solid Films 260, 124 (1995)Google Scholar
[2] Proost, J., Samajdar, I., Verlinden, B., Van Houtte, P., Maex, K. and Delaey, L., Scripta Mater. 39, 1039 (1998)Google Scholar
[3] Proost, J., Maex, K. and Delaey, L., Appl. Phys. Lett. 73, 2748 (1998)Google Scholar
[4] Gangulee, A. and d'Heurle, F.M., Thin Solid Films 16, 227 (1973)Google Scholar
[5] Stoebe, T.G., Gulliver, R.D., Ogurtani, T.O. and Huggins, R.A., Acta Met. 13, 701 (1965)Google Scholar
[6] Oates, A.S., J. Appl. Phys. 79, 163 (1996)Google Scholar
[7] Schreiber, H.-U., Solid-St. Electr. 28, 1153 (1985)Google Scholar
[8] Joo, Y.-C. and Thompson, C.V., J. Appl. Phys. 81, 6062 (1997)Google Scholar
[9] Li, H., Maex, K., Brijs, B., Conard, T. and Froyen, L., Mat. Res. Soc. Symp. Proc. 516, 77 (1998)Google Scholar
[10] Marcus, M.A. and Bower, J.E., J. Appl. Phys. 82, 3821 (1997)Google Scholar
[11] Matsumoto, S., Etoh, R., Ohtsuka, T.. Kouzaki, T. and Ogawa, S., IEEE Proc. IITC, 113 (1998)Google Scholar
[12] Inoue, Y., Tanimoto, S., Yamashita, Y., Ibara, Y.. and Yoneda, K., IEEE Proc. VMIC, 275 (1994)Google Scholar
[13] Srikar, V.T. and Thompson, C.V., Appl. Phys. Lett, 72, 2677 (1998)Google Scholar
[14] Clevenger, L.A. et al., IEEE Proc. IITC, 137 (1998)Google Scholar
[15] Beyer, G.B., Maex, K. et al., “Al speed fill”, Mater. Sci. in Semicond. Proc., accepted (1999)Google Scholar