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The Effect of Co-Implantation on the Electrical Activity of Implanted Carbon in GaAs

Published online by Cambridge University Press:  26 February 2011

A. J. Moll ,
W. Walukiewicz ,
K. M. Yu ,
W. L. Hansen  and
E. E. Haller
A. J. Moll
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road Berkeley, CA 94720 Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, CA 94720
W. Walukiewicz
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road Berkeley, CA 94720
K. M. Yu
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road Berkeley, CA 94720
W. L. Hansen
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road Berkeley, CA 94720
E. E. Haller
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road Berkeley, CA 94720 Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, CA 94720
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Abstract

We have undertaken a systematic study of the effect of co-implantation on the electrical properties of C implanted in GaAs. Two effects have been studied, the additional damage caused by co-implantation and the stoichiometry in the implanted layer. A series of co-implant ions were used: group III (B, Al, Ga), group V (N, P, As) and noble gases (Ar, Kr). Co-implantation of ions which create an amorphous layer was found to increase the electrical activity of C Once damage was created, maintaining stoichiometric balance by co-implantation of a group III further increased the fraction of electrically active carbon impurities. Co-implantation of Ga and rapid thermal annealing at 950°C for 10 s resulted in carbon activation as high as 68%, the highest value ever reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 811
Copyright
Copyright © Materials Research Society 1992

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References

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