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Effect of Cl in Gate Oxidation

Published online by Cambridge University Press:  10 February 2011

P. W. Mertens ,
M. J. McGeary ,
M. Schaekers ,
H. Sprey ,
B. Vermeire ,
M. Depast ,
M. Meuris  and
M. M. Heyns
P. W. Mertens
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, [email protected]
M. J. McGeary
Affiliation:
Olin, 350 Knotter Drive, Cheshire, CT, USA
M. Schaekers
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, [email protected]
H. Sprey
Affiliation:
ASM Europe, Rembrandtlaan 7–9, 3723 BG Bilthoven, The Netherlands
B. Vermeire
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, [email protected] currently at the University of Arizona, Tucson, AZ, USA
M. Depast
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, [email protected]
M. Meuris
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, [email protected]
M. M. Heyns
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, [email protected]
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Abstract

The present study reviews the use of Cl in gate oxidation furnaces for growth of high quality gate oxides with a thickness in the range of 2 to 15 nm. The following, commercially available, “state of the art” Cl-precursors have been tested: 1,1,1- trichloroethane (TCA), irons-1,2-dichloroethylene (DCE) and oxalyl chloride (OC). Different parameters were evaluated including: metal removal efficiency, poly-silicon haze, Fe bulk incorporation, carrier lifetime and Cl-incorporation in the oxide. Cl2was identified as the active component in Cl-oxidation. As a consequence, OC was identified as being the most efficient Cl-source. In particular, OC is the most suited Cl-source for applications requiring reduced oxygen concentration, such as the manufacturing of ultra thin gate oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 149
Copyright
Copyright © Materials Research Society 1997

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References

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