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Effect of Channel Profile Engineering on Hot Carrier Reliability in nMOSFETs with 100 nm Channel Lengths

Published online by Cambridge University Press:  10 February 2011

Samar K. Saha
Samar K. Saha*
Affiliation:
Technology Modeling Associates, Inc., Sunnyvale, CA 94086–3922, [email protected]
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Abstract

Hot-carrier effect was studied for different channel doping profiles in nMOSFET devices with effective channel length near 100 nm using a device simulator. The test structures for device simulation were generated using gate oxide thickness of 3 nm. The channel doping profiles used were abrupt- and graded-retrograde types with low surface and high substrate concentrations, and conventional step profiles with high surface and low substrate concentrations. For accurate device simulation, a hydrodynamic model for semiconductors was used to simulate the non-local transport phenomena in the devices. The simulation results indicate that for ultra-short channel devices, the current drivability and the hot-carrier effects depend on the shape of channel doping profiles. For a given supply voltage, the hot-carrier effects in ultra-short channel devices can be controlled by optimizing the channel doping profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 191
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Saha, S. in Materials reliability in Microelectronics VI, edited by Filter, W.F., Clement, J.J., Oates, A.S., Rosenberg, R., and Lenahan, P.M. (Mater. Res. Soc. Symp. Proc, 428, Pittsburgh, PA, 1996) pp. 379–384.Google Scholar
2. Hu, H., Jacobs, J.B., Su, L.T., and Antoniadis, D.A., IEEE Trans. Electron Devices ED-42, 669 (1995);Google Scholar
Jacobs, J.B. and Antoniadis, D.A., IEEE Trans. Electron Devices ED-42, 870 (1995).Google Scholar
3. Ono, M., Saito, M., Yoshitomi, T., Fiegna, C., Ohguro, T., Montiose, H.S., Iwai, H., IEEE Trans. Electron Devices ED-42, 1510 (1995); ED-42, 1822 (1995).Google Scholar
4. Aoki, M., Ishii, T., Yoshimura, T., Kiyota, Y., Iijima, S., Yamanaka, T., Kure, T., Ohyu, K., Nishida, T., Okazaki, S., Seki, K., and Shimohigashi, K., IEDM Tech Dig. 1990, 939.Google Scholar
5. TMA MEDICI, Version 2.3, (Technology Modeling Associates, Inc., Sunnyvale, 1997).Google Scholar
6. Saha, S., Yeh, C.S., Lindorfer, Ph., Luo, J., Nellore, U., and Gadepally, B. in Materials reliability in Microelectronics V, edited by Oates, A.S., Filter, W.F., Rosenberg, R., Greer, A.L., and Gadepally, K. (Mater. Res. Soc. Symp. Proc, 391, Pittsburgh, PA, 1995) pp. 21–26.Google Scholar
7. Saha, S., Yeh, C.S., and Gadepally, B., Solid St-Electron 36, 1429 (1993);Google Scholar
Saha, S., Solid St-Electron 37, 1786 (1994).Google Scholar