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Effect of Boron Doping on the C49 TO C54 Phase Transformation in Ti/Si (100) Bilayers

Published online by Cambridge University Press:  10 February 2011

M. Libera  and
A. Quintero
M. Libera
Affiliation:
Stevens Institute of Technology, Hoboken, NJ, 07030
A. Quintero
Affiliation:
Universidad Central de Venezuela, Ciudad Universitaria, Caracas-Venezuela C. Cabral, Jr., L. A. Clevenger and J. M. E. Harper IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

We have demonstrated that the formation of C54 TiSi2 on Boron-doped single crystal silicon substrates, under RTA annealing conditions in a Nitrogen ambient, leads to a thicker TiN capping surface layer, thinner silicide layer, higher C49 to C54 transformation temperature and greater interface roughness compared to C54 TiSi 2 formation on undoped single crystal silicon substrates. Titanium films 32 nm thick were deposited on undoped and boron-doped single crystal silicon substrates. The films were annealed at 3 /C/isn nitrogen to final quenching temperatures between 500 °C and 900 TC. Ex-situ four point probe sheet resistance, cross sectional transmission electron microscopy (XTEM), high resolution transmission electron microscopy (HRTEM) and x-ray diffraction (XRD) were used to analyze the resulting TiN on TiSi2 bilayer. The C49 to C54 transformation occurs circa 760 TC and 810 TC for the undoped and boron-doped cases respectively. HRTEM observations reveal a thick 20 nm TIN layer on the C54 TiSi2 film in the boron-doped case but only fine dispersed TiN particles embedded on the top of the silicide in the undoped case. It was observed that the resultant silicide in the boron-doped case was thinner and the TiSi2 /Si(100) interface is rougher. XRD and TEM analysis show that in the boron doped case, there is a preferred C54 (040) orientation compared to a random orientation for the undoped case.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 303
Copyright
Copyright © Materials Research Society 1997

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