Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-23T15:01:32.706Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Boron Doping on Microcrystalline Germanium Carbon Thin Films

Published online by Cambridge University Press:  01 February 2011

Yasutoshi YASHIKI ,
Seiichi KOUKETSU ,
Shinsuke MIYAJIMA ,
Akira YAMADA  and
Makoto KONAGAI
Yasutoshi YASHIKI
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1 S9-9 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Seiichi KOUKETSU
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, 152-8552, Japan
Shinsuke MIYAJIMA
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, 152-8552, Japan
Akira YAMADA
Affiliation:
[email protected], Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, Tokyo, 152-8552, Japan
Makoto KONAGAI
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, 152-8552, Japan
Get access

Abstract

Effects of boron doping on microcrystalline germanium carbon alloy (μc-Ge1-xCx:H) thin films have been investigated. We deposited boron-doped p-type μc-Ge1-xCx:H thin films by hot-wire chemical vapor deposition technique using hydrogen diluted monomethylgermane (MMG) and diborane (B2H6). A dark conductivity of 1.3 S/cm and carrier concentration of 1.7 x 1020 cm-3 were achieved with B2H6/MMG ratio of 0.1. Furthermore, the activation energy decreased from 0.37 to 0.037 eV with increasing B2H6/MMG ratio from 0 to 0.1. We also fabricated p-type μc-Ge1-xCx:H/n-type c-Si heterojunction diodes. The diodes showed rectifying characteristics. The typical ideality factor and rectifying ratio were 1.4 and 3.7 x 103 at ¡Ó 0.5 V, respectively.

Keywords

Geelectrical propertiesphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A05-04
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Herrold, J. T. and Dalal, V. L., “Growth and properties of microcrystalline germaniumcarbide alloys grown using electron cyclotron resonance plasma processing”, Journal of Non-Crystalline Solids 270 (2000) 255.Google Scholar
2 Kolodzey, J., ”Neil, P. A., Zhang, S., Orner, B. A., Roe, K., Unruh, K. M., Swann, C. P., Waite, M. M., and Shah, S. Ismat, “Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy”, Appl. Phys. Lett. 67 (1995) 1865.Google Scholar
3 Yashiki, Yasutoshi, Miyajima, Shinsuke, Yamada, Akira, and Konagai, Makoto, “Deposition and characterization of µc-Ge1-xCx thin films grown by hot-wire chemical deposition using organo-germane”, Thin Solid Films 501 (2006) 202.Google Scholar
4 Yashiki, Yasutoshi, Kouketsu, Seiichi, Miyajima, Shinsuke, Yamada, Akira, and Konagai, Makoto “Growth and Characterization of Germanium Carbon Thin Films Deposited by VHF Plasma CVD Technique”, Proc. 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (2006) 1608.Google Scholar
5 Chambouleyron, I. and Comedi, D., “Column III and V elements as substitutional dopants in hydrogenated amorphous germanium”, J. of Non-Cryst. Solids 227–230 (1998) 411.Google Scholar
6 Dalal, Vikram L. and Herrold, Jason T., “Microcrystalline Germanium Carbide-A new material for PV conversion”, Presented at 2001 NCPV Program Review Meeting (2001) 348.Google Scholar