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The Effect of Beam Species and Anneal History on Silicon Surface Damage Induced by Ion Beam Etching

Published online by Cambridge University Press:  22 February 2011

R. J. Davis ,
R. Singh ,
S. J. Fonash ,
P. J. Caplan  and
E. H. Poindexter
R. J. Davis
Affiliation:
Engineering Science Program, The Pennsylvania State University, University Park, Pennsylvania 16802
R. Singh
Affiliation:
Engineering Science Program, The Pennsylvania State University, University Park, Pennsylvania 16802
S. J. Fonash
Affiliation:
Engineering Science Program, The Pennsylvania State University, University Park, Pennsylvania 16802
P. J. Caplan
Affiliation:
U. S. Army Electronics Technology and Devices Laboratory, fort Monmouth, New Jersey 07703
E. H. Poindexter
Affiliation:
U. S. Army Electronics Technology and Devices Laboratory, fort Monmouth, New Jersey 07703
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Abstract

Ion beam etching and reactive ion etching have been shown to significantly damage silicon surfaces. In this investigation, ion beam damage is examined as a function of ion beam type (1 keV Ne+, Ar+, and Kr+) and anneal history (temperatures of 500°, 800°, and 1000°C in ambient gases Ar,dN2, and Ar + H2 ). Damage at 1 keV, as characterized by currentvoltage and ESR measurements, appears to be roughly proportional to the inverse of ion size. Relatively long anneals at high temperatures (1 hr. at 800'-1000°C depending upon ambient) are found to be necessary to restore original surface characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 607
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Singh, R., Fonash, S. J., Caplan, P. J., and Poindexter, E. H., Applied Phys. Letters, 43, 502 (1983).Google Scholar
2. Singh, R., Fonash, S. J., Ashok, S., Caplan, P. J., Shappirio, J., Hage-Ali, M., and Ponpon, J., J. Vac. Sci. Tech. A1 (2). 334, Apr.-June 1983.Google Scholar
3. Fonash, S. J., Ashok, S., and Singh, R., Appl. Phys. Letters, 39, 423 (1981).Google Scholar
4. Fonash, S. J., Ashok, S., and Singh, R., Thin Solid Films, 90, 231 (1982).Google Scholar
5. Lee, Y. H., Brosions, P. R., Cheng, L. J., and Corbett, J. W., in Ion Implantation in Semiconductors, Plenum Publishing Corporation, New York (1973) pg. 519.Google Scholar
6. Bean, J. C., Becker, G. F., Petroff, P. M., and Seidel, T. E., J. Appl. Phys., 48 (3), 907 (March 1977).Google Scholar
7. Wang, J. S., Fonash, S. J., and Ashok, S., Electron Devices Lett., 4, 432 December, 1983.Google Scholar