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The Effect of Atomic Mixing on the Depth Profiles of Metal Markers in Silicon

Published online by Cambridge University Press:  25 February 2011

B. V. King ,
D. G. Tonn ,
I.S.T. Tsong  and
J. A. Leavitt
B. V. King
Affiliation:
Physics Department, Arizona State University, Tempe, AZ 85287
D. G. Tonn
Affiliation:
Physics Department, Arizona State University, Tempe, AZ 85287
I.S.T. Tsong
Affiliation:
Physics Department, Arizona State University, Tempe, AZ 85287
J. A. Leavitt
Affiliation:
Physics Department, University of Arizona, Tucson, AZ 85721
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Abstract

Atomic mixing effects of sputter depth-profiles are modeled by a diffusion theory with a depth-dependent diffusion constant D. The model is compared to SIMS depth profiles, using 5 keV Ar+ bombardment of dilute thin-film multilayers of Al, Ag, Ti and Mo in silicon. The experimental values of D can be explained by cascade mixing and radiation enhanced diffusion within the cascade for Al, Ag and Ti markers but not for the Mo marker.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 103
Copyright
Copyright © Materials Research Society 1984

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