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The Effect of Ar Sputtering on the Disordering of AlGaAs/GaAs Multiple Quantum Wells

Published online by Cambridge University Press:  26 February 2011

C. Shieh ,
C. Colvard ,
J. Mantz ,
K. Alavi  and
R. Engelmann
C. Shieh
Affiliation:
Siemens Corporate Research, 755 College Rd. East, Princeton, NJ 08540
C. Colvard
Affiliation:
Siemens Corporate Research, 755 College Rd. East, Princeton, NJ 08540
J. Mantz
Affiliation:
Siemens Corporate Research, 755 College Rd. East, Princeton, NJ 08540
K. Alavi
Affiliation:
now at the NSF Center for AEDS, University of Texas, Arlington, TX 76019
R. Engelmann
Affiliation:
Siemens Corporate Research, 755 College Rd. East, Princeton, NJ 08540
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Abstract

The effect of Ar sputtering, in combination with different dielectric cappings, on the disordering of AlGaAs/GaAs multiple quantum wells was studied. It was found that the combination of Ar sputter etch and SiO2 capping provided the strongest enhancement in disordering. This effect generates enough change in refractive index to produce an index guided laser.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 531
Copyright
Copyright © Materials Research Society 1989

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References

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