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Effect of Al Concentration on Growth of Antiphase Domains in Ti3Al

Published online by Cambridge University Press:  15 March 2011

Y. Koizumi ,
H. Katsumura ,
Y. Minamino  and
N. Tsuji
Y. Koizumi
Affiliation:
Department of Adaptive Machine Systems, Osaka University, 2-1 Yamada-oka, Suita Osaka 565-0871, Japan
H. Katsumura
Affiliation:
Department of Adaptive Machine Systems, Osaka University, 2-1 Yamada-oka, Suita Osaka 565-0871, Japan
Y. Minamino
Affiliation:
Department of Adaptive Machine Systems, Osaka University, 2-1 Yamada-oka, Suita Osaka 565-0871, Japan
N. Tsuji
Affiliation:
Department of Adaptive Machine Systems, Osaka University, 2-1 Yamada-oka, Suita Osaka 565-0871, Japan
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Abstract

Effects of Al-concentration on growth of antiphase domains (APDs) in Ti3Al crystals have been investigated using crystals with stoichiometric (Ti-25at.%Al) and Al-rich (Ti-33at.%Al) compositions in the temperature range from 973K to 1173K. The growth rate of APDs in the Al-rich crystal is several times higher than that in the stoichiometric crystals at all the temperatures investigated. While the time dependence of APD size obeys the parabolic-growth-law in the stoichiometric crystal, negative deviations from the law takes place at the late stage of the APD growth in the Al-rich crystal owing to the pinning effect of low-energy APB boundaries. APD boundaries lying on prism planes are formed in the Al-rich crystal annealed at 973K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 705: Symposium Y – Nanopatterning–From Ultralarge-Scale Integration to Biotechnology , 2001 , Y7.10
Copyright
Copyright © Materials Research Society 2002

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