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Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

Published online by Cambridge University Press:  03 September 2012

Irai Lo ,
W. C. Mitchel ,
C. E. Stutz ,
K. R. Evans  and
M. O. Manasreh
Irai Lo
Affiliation:
WL/MLPO, Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433–6533.
W. C. Mitchel
Affiliation:
WL/MLPO, Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433–6533.
C. E. Stutz
Affiliation:
WL/ELRA, Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433–6543.
K. R. Evans
Affiliation:
WL/ELRA, Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433–6543.
M. O. Manasreh
Affiliation:
WL/ELRA, Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433–6543.
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Abstract

We have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 893
Copyright
Copyright © Materials Research Society 1992

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References

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