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ECR Plasma Etching Technology for ULSIs

Published online by Cambridge University Press:  16 February 2011

Seiji Samukawa
Seiji Samukawa*
Affiliation:
VLSI Development Div., NEC Corporation 1120 Shimokuzawa Sagamihara, Kanagawa, 229, Japan
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Abstract

A new electron cyclotron resonance (ECR) plasma etching technology has been developed to realize simultaneously high selectivity, high rate and anisotropic etching for phosphorus doped poly-Si and WSix/poly-Si at a low ion energy. In this technology, a substrate is located around the ECR position (875 gauss position) in an ECR plasma. As a result of ECR position etching, under the low pressure of 5 × 10−4 Torr, a high etching rate and an infinite selectivity to SiO2 etching are realized by using C12/O2 and Cl2/O2/SF6 etching gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 97
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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