Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T17:34:16.410Z Has data issue: false hasContentIssue false
  • English
  • Français

Ecr Plasma Enhanced MOCVD of Titanium Nitride

Published online by Cambridge University Press:  22 February 2011

M.E. Gross ,
A. Weber ,
R. Nikulski ,
C.-P. Klages ,
R.M. Charatan ,
W.L. Brown ,
E. Dons  and
D.J. Eagleshamn
M.E. Gross
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
A. Weber
Affiliation:
Fraunhofer-Institut fur Schicht- und Oberflachentechnik, Hamburg, F.R.G
R. Nikulski
Affiliation:
Fraunhofer-Institut fur Schicht- und Oberflachentechnik, Hamburg, F.R.G
C.-P. Klages
Affiliation:
Fraunhofer-Institut fur Schicht- und Oberflachentechnik, Hamburg, F.R.G
R.M. Charatan
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
W.L. Brown
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
E. Dons
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
D.J. Eagleshamn
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Get access

Abstract

The ability to deposit high purity TiN by a CVD process that can provide improved conformality over current sputter deposition processes is critical for multilevel Si ULSI device applications. Low temperature deposition of high quality TiN films has been achieved by an ECR plasma enhanced CVD process using the metal-organic precursor, tetrakis(dimethylamido) titanium, Ti(N(CH3)2)4 (TDMAT). TDMAT is introduced into the downstream region of either a N2 or NH3 ECR plasma to deposit highly conducting films at deposition temperatures of as low as 100°C. The electrical resistivity of the TiN films decreases from 100-150μΩ-cm at a deposition temperature of 100°C to 45μΩ-cm at 600°C. The choice of plasma gas, N2 or NH3, affects the composition as well as the crystallographic texture of the films, which exhibit preferred (200) and (111) orientations, respectively. Pretreatment of the Si substrate with N2 or NH3 plasmas also affects the film morphologies, as demonstrated by switching the plasma gas between pretreatment and deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 323
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Sundgren, J.-E., Johansson, B.O., and Karlson, S.-E., Thin Solid Films 105, 353 (1983).CrossRefGoogle Scholar
[2] Joshi, R.V. and Brodsky, S., Proc. Ninth Intl. IEEE VLSI Multilevel Interconnection Conf., 1992, p. 253.Google Scholar
[3] Arkel, A.E. van and Boer, J.H. de, Z. Anorg. allgem. Chem. 148, 345 (1925).CrossRefGoogle Scholar
[4] Ruff, O. and Eisner, F., Ber. 41, 2250 (1908).CrossRefGoogle Scholar
[5] Price, J.B., Tobin, P.J., Pintchovski, F., and Seelbach, C.A., U.S. Patent No. 4,570,328 (18 February 1986).Google Scholar
[6] Kurtz, S.R. and Gordon, R.G., Thin Solid Films 140, 277 (1986).CrossRefGoogle Scholar
[7] Fix, R.M., Gordon, R.G., and Hoffman, D.M., Mater. Res. Soc. Symp. Proc. 168, 357 (1990). R.M. Fix, R.G. Gordon, and D.M. Hoffman, Chem. Mater. 3, 1138 (1991).CrossRefGoogle Scholar
[8] Weber, A., Nikulski, R., and Klages, C.-P., Appl. Phys. Lett. 63, 325 (1993); A. Weber, Proc. 5th Annual Scumacher Symp., pp. 362-400 (Feb. 1993, San Diego, CA).CrossRefGoogle Scholar
[9] Intemann, A., Proc. 5th Annual Scumacher Symp., pp. 159–182 (Feb. 1993, San Diego, CA).Google Scholar
[10] Weber, A., Bringmann, U., Nikulski, R., Pockelmann, R., Klages, C.-P., Gross, M.E., Brown, W.L., Charatan, R.M., Dons, E., and Eaglesham, D.J., “Advanced Metallization for ULSI Applications in 1993,” edited by Favreau, D. and Shacham-Diamand, Y., in press.Google Scholar
[11] Weber, A., Nikulski, R., and Klages, C.-P., Gross, M.E., Dons, E., Charatan, R.M., and Brown, W.L., J. Electrochem. Soc., in press.Google Scholar
[12] Bolmont, D., Bischoff, J.L., Lutz, F., and Kubler, L., Surf. Sci. 269/270, 924 (1992).CrossRefGoogle Scholar
[13] Charatan, R.M., Gross, M.E., and Eaglesham, D.J., this volume.Google Scholar