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Ebic Investigation of Etch Induced Defects in Silicon Introduced by Rie and Ribe.

Published online by Cambridge University Press:  25 February 2011

H.-U. Habermeier ,
M. Eckstein ,
C. Ruf ,
G. Jäger-Waldau  and
G. Zwicker
H.-U. Habermeier
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart-80, FRG
M. Eckstein
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart-80, FRG
C. Ruf
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart-80, FRG
G. Jäger-Waldau
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart-80, FRG
G. Zwicker
Affiliation:
Fraunhoferinstitut für Mikrostrukturtechnik, D 1000 Berlin 33, FRG
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Abstract

Silicon single crystal wafers are lithographically patterned and etched for via holes by means of RIBE, RIE and ECR based techniques. The damage introduced by etching is analyzed using charge collection microscopy. This technique probes sensitively the occurrence of electrically active defects due to their altered electron hole recombination properties compared to the bulk material. Furthermore, investigations of the temperature dependence of the EBIC contrast give informations about the physical mechanisms for the recombination. The experiments revealed a substantial increase [several %] of the EBIC contrast in the etched part of the pattern, i.e. electrically active damage is introduced by the etching technique, giving rise to enhanced recombination. Measurements of the diffusion length in etched and unetched areas of the specimen reveal identical values, i.e. the damage is confined close to the surface. Using the different etching methods quantitatively different defect levels are found. Measurements of the temperature dependence of the EBIC contrast aimed to reveal the physical nature of the defects show a drastic increase of the contrast with decreasing temperature. This increase can be described by two regimes in an Arrhenius plot with a linear characteristic of different slopes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 211
Copyright
Copyright © Materials Research Society 1992

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