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Early yielding and stress recovery in (111) and (100) texture components in Cu thin films determined using synchrotron x-ray diffraction

Published online by Cambridge University Press:  01 February 2011

D. E. Nowak  and
S. P. Baker
D. E. Nowak
Affiliation:
Cornell University, Department of Materials Science and Engineering, Bard Hall, Ithaca, NY 14853, U.S.A.
S. P. Baker
Affiliation:
Cornell University, Department of Materials Science and Engineering, Bard Hall, Ithaca, NY 14853, U.S.A.
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Abstract

Synchrotron x-ray diffraction experiments were used to study the thermomechanical behavior of individual texture components in passivated Cu thin films. Films were deposited to a thickness of 500 nm on SiNx barrier layers on Si substrates and then passivated with SiNx. The films were highly textured with grains having (111) or (100) planes parallel to the plane of the film. In-plane film stresses were determined separately in the two texture components as a function of temperature during thermal cycles and also during isothermal holds at 140°C. The results are compared to models of yield behavior and anelastic recovery.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U10.5
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Shu, J.B., Clyburn, S.B., Mates, T.E. and Baker, S.P., J. Mater. Res., 18 (9), 2122–34 (2003).10.1557/JMR.2003.0298Google Scholar
2. Baker, S.P., Keller, R.M., Kretschmann, A. and Arzt, E., in Materials Reliability in Microelectronics VIII, Mater. Res. Soc. Symp. Proc., 516, 287–98 (1998).Google Scholar
3. Vinci, R.P., Zielinski, E.M. and Bravman, J.C., Thin Solid Films, 262 (1–2), 142–53 (1995).10.1016/0040-6090(95)05834-6Google Scholar
4. Keller, R., Baker, S.P. and Arzt, E., J. Mater. Res., 13 (5), 1307–17 (1998).10.1557/JMR.1998.0186Google Scholar
5. Weiss, D., Gao, H. and Arzt, E., Acta Mater., 49 (13), 2395–403 (2001).10.1016/S1359-6454(01)00168-9Google Scholar
6. Kraft, O. and Volkert, C.A., Advanced Engineering Materials, 3 (3), 99–110 (2001).10.1002/1527-2648(200103)3:3<99::AID-ADEM99>3.0.CO;2-23.0.CO;2-2>Google Scholar
7. Vinci, R.P., Forrest, S.A. and Bravman, J.C., J. Mater. Res., 17 (7), 1863–70 (2002).10.1557/JMR.2002.0275Google Scholar
8. Baker, S.P., Keller-Flaig, R.M. and Shu, J.B., Acta Mater., 51 (10), 3019–36 (2003).10.1016/S1359-6454(03)00113-7Google Scholar
9. Shu, J.B., Ph.D. dissertation, Cornell University, 2003.Google Scholar
10. Freund, L.B., Journal of Applied Mechanics, 54 (3), 553–7 (1987).10.1115/1.3173068Google Scholar
11. Nix, W.D., Metall. Trans. A, 20A (11), 2217–45 (1989).10.1007/BF02666659Google Scholar
12. Spolenak, R., Volkert, C.A., Ziegler, S., Panofen, C. and Brown, W.L., in Dislocations and Deformation Mechanisms in Thin Films and Small Structures, ed. Kraft, O., Schwarz, K.W., Baker, S.P., Freund, L.B. and Hull, R., Mater. Res. Soc. Symp. Proc., 673, 1.4.1–6 (2001).Google Scholar
13. Baker, S.P., Kretschmann, A. and Arzt, E., Acta Mater., 49 (12), 2145–60 (2001).10.1016/S1359-6454(01)00127-6Google Scholar
14. Hellwege, K.H. and Hellwege, A.M., Landolt-Bernstein Numerical data and functional relationships in science and technology Group III: crystal and solid state physics, (SpringerVerlag, New York, 1969).Google Scholar
15. Touloukian, Y.S. and Ho, C.Y., Thermal Expansion Metallic Elements and Alloys Thermophysical Properties of Matter, (IFI/Plenum, New York, 1977).Google Scholar
16. Touloukian, Y.S. and Ho, C.Y., Thermal Expansion: Non-Metallic Elements and Alloys Thermophysical Properties of Matter, (IFI/Plenum, New York, 1975).10.1007/978-1-4757-1622-1Google Scholar