Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T15:17:07.535Z Has data issue: false hasContentIssue false

Early Growth in the Chemical Vapor Deposition of Tin and TiC and Monitoring by Laser Scattering

Published online by Cambridge University Press:  21 February 2011

Max Klein
Affiliation:
Department of Materials Science and Engineering Stevens Institute of Technology, Hoboken, NJ 07030
Bernard Gallois
Affiliation:
Department of Materials Science and Engineering Stevens Institute of Technology, Hoboken, NJ 07030
Get access

Abstract

The early growth of chemically vapor deposited TiN and TiC coatings on pyrolytic graphite was studied in the kinetic- and mass transport-controlled regimes. While steady-state growth of these coatings results in columnar grains, such morphologies do not originate at the substrate/coating interface. Rather, TiC deposition begins on the substrate as fine grains less than 100 nm in diameter. Early TiN growth occurs in layers of 50 nm grains. In both cases, early fine-grained growth occurs at a lower rate than the linear, steady rate observed for columnar growth. A laser scattering technique has been developed as a tool for characterizing early growth through surface roughness. This noncontact method can be used as an in-situ diagnostic to detect changes in the surface of the growing deposit.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Thornton, J.A., Ann. Rev. Mater. Sci. 7, 239 (1977).Google Scholar
2.Messier, R., J. Vac. Sci. Tech. A 4 (3), 490 (1986).Google Scholar
3.Mazor, A., Srolovitz, D.J., Hagan, P.S., Bukiet, B.G., Phys. Rev. Lett. 60 (5), 424 (1988).Google Scholar
4.Ling, S. and Anderson, M.P., J. Electr. Mater. 17 (5), 459 (1988).Google Scholar
5.Bales, G.S., Redfield, A.C., Zangwill, A., Phys Rev. Lett. 62 (7), 776 (1989).Google Scholar
6.Stjernberg, K.G., Gass, H., Hintermann, H.E., Thin Solid Films 40, 81 (1977).Google Scholar
7.Kato, A. and Tamari, N., J. Crys. Growth 29, 55 (1975).Google Scholar
8.Gallois, B.M., Mathur, R., Lee, S.R., Yoo, J.Y., Mat. Res. Soc. Symp. Proc. 132, 49 (1989).Google Scholar
9.Paik, J.S. and Gallois, B. (private communication).Google Scholar
10.Vorberger, T.V. and Teague, E.C., Prec. Eng. 3, 61 (1981).Google Scholar
11.Bennett, H.E., Opt. Eng. 17, 480 (1978).Google Scholar
12.Church, E.L., Jenkinson, H.A., Zavada, J.M., Opt. Eng. 18 (2), 125 (1979).Google Scholar
13.Stover, J.C., Serati, S.A., Gillespie, C.H., Opt. Eng. 23 (4), 406 (1984).Google Scholar