Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T18:18:21.006Z Has data issue: false hasContentIssue false

Dynamics of Silicon Nanoparticle Synthesis by Pulsed Laser Ablation

Published online by Cambridge University Press:  15 February 2011

P.T. Murray
Affiliation:
Research Institute Graduate Materials Engineering University of Dayton Dayton, OH 45469-0162 USA
L. Grazulis
Affiliation:
Research Institute
Get access

Abstract

Si nanoparticles have been synthesized by ablating a Si target in Ar with 355 nm laser radiation. The nanoparticle size distribution has been determined in real time by laser-induced time of flight mass spectrometry. Under these conditions, nanoparticles that are formed in 1.0 and 2.0 Torr of background Ar gas exhibit log-normal size distributions with most probable diameters of 2.6 and 3.0 nm, respectively. The speed distribution of the nanoparticles has been determined by varying the time delay between the ablation and photoionization lasers. The results indicate that the most probable speed of the nanoparticles, after formation and a 25 mm drift in background Ar, is 100 m/s. Finally, there is a deviation of the size distribution from the log-normal distribution at small nanoparticle sizes. This is attributed to multiple ionization of the nanoparticles. Confirming evidence for multiple ionization is provided by the atomic and mass spectra which show peak broadening due to Coulomb explosion.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Chiu, L.A., Seraphin, A.A., and Kolenbrader, K.D., J. Electron. Mater. 23(3), 347 (1994).Google Scholar
2. Movtchan, I.A., Marine, W., Dreyfus, R.W., Le, H.C., Sentis, M., and Autric, M., Appl. Surf. Sci. 96-8, 251 (1996).Google Scholar
3. Muramoto, J., Nakata, Y., Okada, T., and Maeda, M., Jpn.J. Appl. Phys. Part 2-Letters 36(5A), L563–L565 (1997).Google Scholar
4. Geohegan, D.B., Puretzky, A.A., Duscher G., G., and Pennycook S., S.J. J., Appl. Phys. Lett. 72 (23), 2987 (1998).Google Scholar
5. Geohegan, D.B., Puretzky, A.A., Duscher, G., and Pennycook S., S.J. J., Appl. Phys. Lett. 73 (4), 438 (1998).Google Scholar
6. Makimura, T., Mizuta, T., and Murakami, K., Appl. Phys. A-Materials Science & Processing 69, S213–S215 (1999).Google Scholar
7. Makimura, T., Mizuta, T., and Murakami, K., Appl. Phys. Lett. 76(11), 1401 (2000).Google Scholar
8. Narayanan, V., and Thareja, R.K., Appl. Surf. Sci. 222(1-4), 382 (2004).Google Scholar
9. Patrone, L., Nelson, D., Safarov, V.I., Sentis, M., Marine, W., and Giorgio, S., J. Appl. Phys. 87 (8), 3829 (2000).Google Scholar
10. Rayleigh, Lord, Philos. Mag. 14 (1882) 184.Google Scholar