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Dynamics of In Cluster Growth During InP(110) Surface Dissociation Studied by in-situ Reflection Electron Microscopy

Published online by Cambridge University Press:  15 February 2011

M. Gajdardziska-Josifovska
Affiliation:
Department of Physics and the Laboratory for Surface Studies, University of Wisconsin Milwaukee, P. O. Box 413, Milwaukee, W1 53201, [email protected]
M. H. Malay
Affiliation:
Department of Physics and the Laboratory for Surface Studies, University of Wisconsin Milwaukee, P. O. Box 413, Milwaukee, W1 53201, [email protected]
David J. Smith
Affiliation:
Department of Physics and Center for Solid State Science, Arizona State University, Tempe, AZ 85287
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Abstract

Annealing effects on InP (110) surfaces were observed in situ using a modified ultrahighvacuum transmission electron microscope equipped with a specimen heating holder. Reflection electron microscopy (REM) was used to record the dynamics of nucleation and growth of liquid In clusters at 650°C, following the desorption of P from the surface. These droplets showed no preference for nucleation at surface steps, and the steps appeared stationary throughout the annealing process. Two distinct types of In cluster growth rates and shape evolutions were detected. A model was developed to decouple height and length information in the REM images. Contact angle and volume above the InP(110) surface were calculated from the dynamic data. The change of contact angle with time provides evidence for sub-surface cluster etching.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1. Yagi, K., Surf. Sci. Reports, 17 (1993) 305.Google Scholar
2. Wang, Z. L., Rep. Prog. Phys. 56 (1993) 997.Google Scholar
3. Hsu, T., Microscopy Research and Technique, 20 (1992) 318 (and other papers in this special issue on REM).Google Scholar
4. Smith, D.J., Gajdardziska-Josifovska, M., Lu, P., McCartney, M.R., Podbrdsky, J., Swann, P.R. and Jones, J.S., Ultramicroscopy 49 (1993) 26.Google Scholar
5. Farrow, R. F. C., J. Phys. D 7 (1974) 2436.Google Scholar
6. Bayliss, C.R. and Kirk, D.L., J. Phys. D: Appl. Phys. 9 (1976) 233.Google Scholar
7. Tsang, J.C., Kahn, A. and Mark, P., Surf. Sci. 97 (1980) 119.Google Scholar
8. Massies, J. and Lemaire-Dezaly, F., J. Appl. Phys. 57 (1985) 237.Google Scholar
9. Puddephatt, S. and Lowes, T.D., Mat. Res. Soc. Symp. Proc. 317 (1994) 143.Google Scholar
10. Lowes, T. D. and Zinke-Allmang, M., Phys. Rev. B, 49 (1994) 16678.Google Scholar
11. Gajdardziska-Josifovska, M., Malay, M. H. and Smith, D. J., Surf. Sci. 340 (1995) 141.Google Scholar
12. Englehard, H., Schaefer, J.A., Stietz, F., Goldman, A., Fellenberg, R. and Draun, W., Surf. Sci. 276 (1994) 21.Google Scholar
13. M. Gajdardziska-Josifovska and D. J. Smith, in Electron Microscopy 1994, Proc. 13th International Congess on Electron Microscopy, Eds. Jouffrey, B. and Colliex, C., Les Editions de Physique, Les Ulis, Vol. 2B, (1994) pp. 1067–68.Google Scholar
14. Massies, J. and Lemaire-Dezaly, F., J. Appl. Phys. 55 (1984) 3136.Google Scholar