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Dynamic Mechanical Analysis (DMA) of CMP pad materials

Published online by Cambridge University Press:  14 March 2011

Irene Li ,
Kersten M. Forsthoefel ,
Kathleen A. Richardson ,
Yaw S. Obeng ,
William G. Easter  and
Alvaro Maury
Irene Li
Affiliation:
School of Optics/CREOL, Department of Chemistry, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL 32816, USA
Kersten M. Forsthoefel
Affiliation:
now at Univ. of Pennsylvania, Chemistry Department
Kathleen A. Richardson
Affiliation:
School of Optics/CREOL, Department of Chemistry, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL 32816, USA
Yaw S. Obeng
Affiliation:
Bell Laboratories, Lucent Technologies, 9333 South John Young Parkway, Orlando, FL 32819, USA
William G. Easter
Affiliation:
Bell Laboratories, Lucent Technologies, 9333 South John Young Parkway, Orlando, FL 32819, USA
Alvaro Maury
Affiliation:
Bell Laboratories, Lucent Technologies, 9333 South John Young Parkway, Orlando, FL 32819, USA
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Abstract

In the semiconductor industry, there is a need to establish fundamental, mechanism-based, correlation(s) between process conditions, consumables (e.g., pads and slurries), and observed process performance in Chemical-Mechanical Polishing (CMP). In this paper, we present recent results of studies on polyurethane-based CMP pads in static and dynamic conditions using Dynamic Mechanical Analysis (DMA) to monitor modulus and energy damping changes. Two-layered, composite IC1000 on Suba IV pads, [IC1000 (cast and cured polyurethane elastomer) / Suba IV (polyurethane impregnated polyester felt)], were analyzed: prior to use (fresh); after a 24-hr soak in silica-containing oxide slurry (basic); and after oxide polishing (used). Upon comparison it was observed that a characteristic transition feature due to water is present at sub-ambient temperatures in both the slurry soaked and used pads. Exposure of as-received pads to basic oxide slurry results in a broad, high temperature transition thought to be the result of chemical-induced disruption of macrostructural units. Polishing (load-enhanced chemical exposure) introduces further changes to the polymer network represented by an apparent degradation to the structural species responsible for the high temperature transition in Suba IV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 613: Symposium E – Chemical-Mechanical Polishing 2000 - Fundamentals… , 2000 , E7.3.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Li, I., Forsthoefel, K. M., Richardson, K. A., and Obeng, Y. S., Mechanistic aspects of the relationship between CMP consumables and polishing characteristics, Thin Solid Films, submitted for publication (Jan 2000).Google Scholar
2. Menard, K. P., Dynamic Mechanical Analysis (A Practical Introduction), CRC Press, Boca Raton, FL (1999) pp.4.10.1201/9781420049183Google Scholar
3. Turi, E., Thermal Characterization of Polymeric Materials. 2nd Ed., Vol 1. Academic Press, Brooklyn, New York (1997) pp.486 Google Scholar
4. Prime, R. B., Burns, J. M., Karmin, M. L., Moy, C.H., and Tu, H-B., J. of Coatings Tech., 60, No. 761, 55–60 (1988).Google Scholar
5. Steigerwald, J. M., Murarka, S. P., Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, Wiley-Interscience Publication, New York (1997) pp. 66–67.10.1002/9783527617746Google Scholar