Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-19T02:07:11.709Z Has data issue: false hasContentIssue false
  • English
  • Français

Dynamic Behavior of Nano Second Pulsed Nd:Glass Laser Annealing in Ion Implanted Silicon

Published online by Cambridge University Press:  15 February 2011

M. Takai ,
Y. Sato ,
K. Murakami ,
K. Gamo ,
T. Minamisono  and
S. Namba
M. Takai
Affiliation:
Faculty of Engineering Science
Y. Sato
Affiliation:
Faculty of Engineering Science
K. Murakami
Affiliation:
Faculty of Engineering Science
K. Gamo
Affiliation:
Faculty of Engineering Science
T. Minamisono
Affiliation:
Faculty of Engineering Science
S. Namba
Affiliation:
Faculty of Engineering Science
Get access

Abstract

Time resolved transmission (λ = 1060 nm) and reflectivity (λ = 632.8 nm) during 20 nsec Nd:glass laser annealing in ion implanted Si were measured to study dynamic behaviors of laser annealing. Transmitted laser energy was also measured to complement transient measurements. Transient transmitted light intensity was found to be almost completely quenched as would be expected from absorption by a molten Si layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 91
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Auston, D. H., Surko, C. M., Venkatesan, T. N. C., Slusher, R. E. and Golovchenko, J. A., Appl. Phys. Lett. 33, 437 (1978);Google Scholar
1a Murakami, K., Kawabe, M., Gamo, K., Namba, S. and Aoyagi, Y., Phys. Letters 70A, 332 (1979)Google Scholar
2. Baeri, P., Campisano, S. U., Foti, G. and Rimini, E., J. Appl. Phys. 50, 788 (1979);Google Scholar
2a Surko, C. M., Simons, A. L., Auston, D. H., Golovchenko, J. A., Slusher, R. E. and Venkatesan, T. N. C., Appl. Phys. Lett. 34, 635 (1979)Google Scholar
3. Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980)Google Scholar
4. Aydinli, A., Lo, H. W., Lee, M. C. and Compaan, A., Phys. Rev. Lett. 46, 1640 (1981)Google Scholar
5. Van Vechten, J. A., Tsu, R. and Saris, F. W., Phys. Letters 74A, 422 (1979)Google Scholar
6. Shvarev, K. M., Baum, B. A. and Gel'd, P. V., Sov. Phys. Solid State 16, 2111 (1975)Google Scholar
7. Cullis, A. G., Webber, H. C., Poate, J. M and Simons, A. L., Appl. Phys. Lett. 36, 320 (1980)Google Scholar