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Dual-Beam Photocurrent Spectra in Undoped a-Si:H

Published online by Cambridge University Press:  01 January 1993

J.Z Liu ,
G. Lewen ,
J.P. Conde  and
P. Rocai Cabarrocas
J.Z Liu
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton, NJ 08540,
G. Lewen
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton, NJ 08540,
J.P. Conde*
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton, NJ 08540,
P. Rocai Cabarrocas
Affiliation:
LPICM, Ecole Polytechnique, 91128 Palaiseau Cedex, France
*
§ On leave from Instituto Superior Tecnico, 1096 Lisboa Codex - Portugal.
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Abstract

It is shown that the anomalous band in dual-beam CPM (DBCPM) spectra results from a combination of two processes: photocurrent enhancement due to excitations by the probe light from the valence baud to theD+ defect states, and photocurrent reduction due to excitations by the probe light from the D° defect states to the conduction band. From the DBCPM spectra, the electron correlation energy for the (filled)D - defects is determined to be 0.25 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 473
Copyright
Copyright © Materials Research Society 1993

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References

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