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Dual Ion Implantations of Si+As and S+As into GaAs

Published online by Cambridge University Press:  21 February 2011

W. D. Fan ,
W. Y. Wang  and
B. L. Zhou
W. D. Fan
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
W. Y. Wang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
B. L. Zhou
Affiliation:
Xsirius Superconductivity Inc., Scottsdale, Arizona 85260, USA
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Abstract

As+ implantation has been used to compensate the As loss during annealing for Si- or S-implanted GaAs. The As+ implantation was at an energy range of 25–100KeV to a dose range of 1012-1015cm−2. The Si+ or S+ implantation was at 150 or 50KeV respectively to the same dose, 27times;1013cm−2. By using the measurements of the Hall effect and sheet resistivity, the activation efficiency and mobility of the dually implanted sample with Si+ and As+ (25KeV, 1×1013cm− 2 ) after TA at 1050°C for 6s increase by 21 and 18% respectively over those of the singly Si-implanted sample after TA at 1100°C for 6s. Those of the dually implanted sample with Si+ and As+ (100KeV, 1×1013cm− 2 ) increase by 63 and 30% respectively over those of the singly Si-implanted sample after FA at 800°C for 30min. Also, the density of SiAs and VGa determined by 20K PL spectra decreases of dually Si- and As-implanted samples. The activation efficiency and mobility of the d8ally implanted sample with S+ and As+ (40KeV, 1×1013cm−2 ) after TA at 1100°C for 12s increase by 17 and 16% respectively over those of the singly Simplanted sample. The annealing behaviour after As+ implantation is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 327
Copyright
Copyright © Materials Research Society 1989

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References

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