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Dual Implantations of Ti and C into Sintered Α-Sic and Hot Pressed Si3n4

Published online by Cambridge University Press:  25 February 2011

R.S. Bhattacharya ,
A.K. Rai ,
S.C. Kung  and
D. Patrizio
R.S. Bhattacharya
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Rd., Dayton, OH 45432
A.K. Rai
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Rd., Dayton, OH 45432
S.C. Kung
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Rd., Dayton, OH 45432
D. Patrizio
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Rd., Dayton, OH 45432
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Abstract

Dual ion implantations of Ti+ and C+ into sintered a-SiC and hot pressed SÌ3N4 have been studied by Rutherford backscattering spectroscopy (RBS) combined with plan/cross section view transmission electron microscopy (TEM). The samples were analyzed before and after annealing at 1200°C for 2 hours in a vacuum of 1x10-6 torr. The results were compared with single ion implantation of Ti+. RBS analysis showed that no oxidation occurred during annealing and Ti diffused toward the surface in both SiC and SigN^ Cross section TEM analysis revealed the formation of TiC precipitates in SiC due to both dual (Ti+ + C+) and single (Ti+) ion implantations. Precipitates were found to form in SÌ3N4 as well; however, because of very close proximity of observed d values with those of TiC, TiN and β-SiC, it was not possible to uniquely identify the chemical nature of these precipitates. Thermo-dynamic calculations were performed to explain the observed results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 605
Copyright
Copyright © Materials Research Society 1990

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References

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