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Dry—Processing Induced Isolation—Degradation in GaAs Integrated Circuits
Published online by Cambridge University Press: 28 February 2011
Abstract
Our study shows that the isolation—degradation in semi—insulating GaAs substrate is closely related to dry—processes during the device fabrication. It was found that EL2, the major electron trap in undoped LEC semiinsulating GaAs, could be passivated by plasma—assisted etchings or depositions. The passivation of EL2 causessurface leakage and leads to crosstalk in GaAs ICs.
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- Copyright © Materials Research Society 1985