Article contents
Dry Techniques for Epitaxial Graphene Transfer
Published online by Cambridge University Press: 01 February 2011
Abstract
Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1259: Symposium S – Graphene Materials and Devices , 2010 , 1259-S18-05
- Copyright
- Copyright © Materials Research Society 2010
References
- 1
- Cited by