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Dry Techniques for Epitaxial Graphene Transfer

Published online by Cambridge University Press:  01 February 2011

Joshua D. Caldwell ,
Travis J. Anderson ,
Karl D. Hobart ,
Glenn G. Jernigan ,
James C. Culbertson ,
Fritz J. Kub ,
Joseph L. Tedesco ,
Jennifer K. Hite ,
Michael A. Mastro  and
Rachael L. Myers-Ward
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Joshua D. Caldwell
Affiliation:
[email protected]@gmail.com, Naval Research Lab, Washington, District of Columbia, United States
Travis J. Anderson
Affiliation:
[email protected], Naval Research Lab, Washington, District of Columbia, United States
Karl D. Hobart
Affiliation:
[email protected], Naval Research Lab, Washington, District of Columbia, United States
Glenn G. Jernigan
Affiliation:
[email protected], United States
James C. Culbertson
Affiliation:
[email protected], Naval Research Lab, Washington, District of Columbia, United States
Fritz J. Kub
Affiliation:
[email protected], Naval Research Lab, Washington, District of Columbia, United States
Joseph L. Tedesco
Affiliation:
[email protected], Naval Research Lab, Washington, District of Columbia, United States
Jennifer K. Hite
Affiliation:
[email protected], Naval Research Lab, Washington, District of Columbia, United States
Michael A. Mastro
Affiliation:
[email protected], Naval Research Lab, Washington, District of Columbia, United States
Rachael L. Myers-Ward
Affiliation:
[email protected]
Charles R. Eddy
Affiliation:
[email protected], United States
Paul M. Campbell
Affiliation:
[email protected], Naval Research Lab, Washington, District of Columbia, United States
D. Kurt Gaskill
Affiliation:
[email protected], Naval Research Lab, Washington, District of Columbia, United States
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Abstract

Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.

Keywords

Cdevicesbonding
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1259: Symposium S – Graphene Materials and Devices , 2010 , 1259-S18-05
Copyright
Copyright © Materials Research Society 2010

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