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Dry Etching of PZT Films in an Ecr Plasma

Published online by Cambridge University Press:  21 February 2011

Barbara Charlet  and
Kerrie E. Davies
Barbara Charlet
Affiliation:
CEA, DTA, LETI, CEN-Grenoble 85 X- F 38041, Grenoble Cedex, France
Kerrie E. Davies
Affiliation:
CEA, DTA, LETI, CEN-Grenoble 85 X- F 38041, Grenoble Cedex, France
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Abstract

PZT films were etched in an ECR microwave reactor with RF polarization.The etch rate was evaluated using various gas mixtures including combinations of two of the following: C12, NF3, SF6 and HBr. The etch rate was measured as a function of the percentage of one gas in the mixture. Other parameters investigated included gas pressure, bias voltage on the electrode and substrate temperature.Results of the effect of temperature show that etch rates are higher on high temperature substrates than on low temperature substrates. A mixture of C12 and SF2 provided a PZT etch rate of 750 Å / min on a substrate, at approximately 100 °C. We evaluated the resultant etch profile and surface roughness

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 363
Copyright
Copyright © Materials Research Society 1993

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