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Dry Etching of MRAM Structures

Published online by Cambridge University Press:  14 March 2011

S.J. Pearton ,
H. Cho ,
K.B. Jung ,
J.R. Childress ,
F. Sharifi  and
J. Marburger
S.J. Pearton
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611
H. Cho
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611
K.B. Jung
Affiliation:
IBM Almaden Research Center San Jose, CA 95120
J.R. Childress
Affiliation:
IBM Almaden Research Center San Jose, CA 95120
F. Sharifi
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611
J. Marburger
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611
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Abstract

A wide variety of GMR and CMR materials have been patterned by high density plasma etching in both corrosive (Cl2-based) and non-corrosive (CO/NH3) plasma chemistries. The former produce much higher etch rates but require careful in-situ or ex-situ, post-etch cleaning to prevent corrosion of the metallic multilayers. The former may have application for shallow etching of NiFe-based structures, but there is little chemical contribution to the etch mechanism and mask erosion can be a problem. The magnetic performance of patterned MRAM elements is stable over long periods (>1 year) after etching in Cl2 plasmas, provided a suitable cleaning protocol is followed. It is also clear that high ion energies during patterning of magnetic materials can have a significant influence on their coercivity. The effects of ion energy, ion flux and process temperature are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 614: Symposium F – Magnetic Materials, Structures & Processing for Information… , 2000 , F10.2.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. see, for example, IBM J. Res. Develop. 42, 3–116 (1998).10.1147/rd.421.0003Google Scholar
2. Russek, S.E., Oti, J.O., Kaka, S. and Chen, E.Y., J. Appl. Phys. 85, 4773 (199).10.1063/1.370477Google Scholar
3. Delft, F.C.M.J. van, J. Magn. Mag. Mater. 140–144, 2203 (1995).10.1016/0304-8853(94)00574-5Google Scholar
4. Fischl, D.S. and Hess, D., J. Vac. Sci. Technol. B 6, 1577 (1988).10.1116/1.584218Google Scholar
5. Kinoshita, K., Yamada, K. and Matutera, H., IEEE Trans. Magn. 27, 4888 (19991).10.1109/20.278980Google Scholar
6. Jung, K.B., Lambers, E.S., Childress, J.R., Pearton, S.J., Jenson, M. and Hurst, A.T., Appl. Phys. Lett. 71, 1255 (1997).10.1063/1.119925Google Scholar
7. Jung, K.B., Hong, J., Cho, H., Caballero, J.A., Childress, J.R., Pearton, S.J., Jenson, M. and Hurst, A.T., Appl. Surf. Sci. 138/139, 111 (1999).10.1016/S0169-4332(98)00417-6Google Scholar
8. Nakatani, I., IEEE Trans Mag. 32, 4448 (1996).10.1109/20.538896Google Scholar
9. Gokan, H. and Eho, S., J. Vac. Sci. Technol. 18, 23 (1981).10.1116/1.570693Google Scholar
10. Balooch, M., Fischl, D.S., Olander, D.R. and Siekhaus, W.J., J. Electrochem. Soc. 135, 2090 (1988).10.1149/1.2096215Google Scholar
11. Hess, D.W., Plasma Chem. Plasma Proc. 2, 141 (1982).10.1007/BF00633130Google Scholar
12. Vasile, M.J. and Mogab, C.J., J. Vac. Sci. Technol. A 4, 1841 (1986).10.1116/1.573775Google Scholar
13. see, for example, Oehrlein, G.S. and Kurogi, Y., Mat. Sci. Eng. R24, 853 (1998).Google Scholar