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Dry Etch and Wet Clean Process Characterization of Ultra Low-k(ULK) Material Nanoglass®E

Published online by Cambridge University Press:  17 March 2011

B. Ramana Murthy ,
C.K. Chang ,
Ahilakrishnamoorthy ,
Y.W. Chen  and
Ananth Naman
B. Ramana Murthy
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park 2, Singapore 117685
C.K. Chang
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park 2, Singapore 117685
Y.W. Chen
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park 2, Singapore 117685
Ananth Naman
Affiliation:
Honeywell Electronic Materials, 1349 Moffett Park Drive, Sunnyvale, CA 94089, USA
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Abstract

NANOGLASS®E (NGE) ultra low-k (ULK) dielectric material, with a k-value of∼2.2, was integrated for 130 nm Cu/ULK interconnect process technology. Thiswork deals with the characterization of reactive ion etching (RIE) and wetchemical processing of this film. Blanket films were characterized for etchrate, surface roughness, k-value change and chemical compatibility. Trenchetching and post etch wet clean processes were developed and optimizedenabling process integration for single damascene structures. Trench etchprocesses were evaluated for two etch schemes viz., etching under - photoresist and etching under hardmask. The details of each scheme will bedescribed and advantages observed will be discussed. To evaluate effect ofwet clean processes three different formulations were used. After formationof single damascene wafers, metal comb and serpentine structures weremeasured for metal continuity and bridging. Electrical continuity wasachieved for long serpentine structures with 0.18μm/0.18μm linewidth/spacing. Based on voltage ramp test results the film was found to besensitive to certain plasma etch conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F6.6
Copyright
Copyright © Materials Research Society 2004

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References

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