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The Driving Pulse width Dependence of The Hysteresis Effect in ZnS:Mn Electroluminescent Devices: A Possible Addressing Method for Memory Tfel Displays

Published online by Cambridge University Press:  10 February 2011

Andy Ying-Guey Fuh
Andy Ying-Guey Fuh*
Affiliation:
Department of Physics, National Cheng-Kung Univ., Tainan, Taiwan 701, ROC
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Abstract

A pronounced hysteresis effect was observed in the brightness versus pulse width response of memory electroluminescent (EL) devices driven near the threshold voltage. The use of this effect to address memory EL displays is suggested. A benefit of this technique is that the display is always operated near threshold with a relatively low dielectric stress. Longer device life might be therefore expected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 247
Copyright
Copyright © Materials Research Society 1997

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References

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