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Dot Pattern Formation on Silicon Surfaces by Low-Energy Ion Beam Erosion

Published online by Cambridge University Press:  01 February 2011

B. Ziberi ,
F. Frost ,
T. Höche  and
B. Rauschenbach
B. Ziberi
Affiliation:
Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig, Germany.
F. Frost
Affiliation:
Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig, Germany.
T. Höche
Affiliation:
also affiliated with: 3D-Micromac AG, Max-Planck-Straβe 22b, D-09114 Chemnitz, Germany.
B. Rauschenbach
Affiliation:
Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig, Germany.
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Abstract

Experimental studies of low-energy (≤ 2000 eV) Ar+ ion beam erosion of Si surfaces under normal and oblique ion incidence with simultaneous sample rotation at room temperature show a variety of topographies. At oblique ion incidence, between 70° and 80° with respect to surface normal, dot patterns evolve (dot size ∼ 30 nm) with a remarkably high degree of ordering comparable to dot nanostructures reported for different III/V compound semiconductors. The mean size and ordering of these nanostructures can be adjusted by various process parameters like ion beam energy and erosion time, respectively. Scanning force microscopy (AFM) has been used to characterize the evolution of the surface topography.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 849: Symposium KK – Kinetics-Driven Nanopatterning on Surfaces , 2004 , KK6.2
Copyright
Copyright © Materials Research Society 2005

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References

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