Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-05T15:26:28.437Z Has data issue: false hasContentIssue false
  • English
  • Français

Dose Dependence of Ion Beam Mixing of Au on Amorphous and Single Crystalline Si and Ge

Published online by Cambridge University Press:  25 February 2011

D. B. Poker ,
O. W. Holland  and
B. R. Appleton
D. B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Get access

Abstract

The rate of ion induced mixing of 700 Å Au layers vapor deposited on amorphous and single crystalline Si substrates held at room temperature was measured as a function of dose using 300 key Si, 350 keV Ar, and 525 keV Kr ion beams.Mixing profiles were measured at various fluences by Rutherford backscattering techniques and were found to be consistent with mixed layers whose thicknesses increased with ion dose. Mixing compositions, which were stoichiometric over the entire mixed region at Au-28.5 at.% Si, were found to be independent of ion species or implant fluence. For all ion species the dose dependence of mixing was closer to linear than the square root power law reported previously [1]. In addition, the mixing rate for Au on single crystalline substrates was significantly higher than Au n substrates amorphised by Si (self-ion) implantation at liquid nitrogen temperature. No difference was found between the mixing rates when the amorphous substrates were prepared by room temperature implantation. Preliminary results indicate similar behavior for the Au/Ge couple.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 73
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsaur, B. Y. and Mayer, J. W., Philos. Mag. A43, 345 (1981).Google Scholar
2. Lau, S. S., Tsaur, B. Y., von Allmen, M., Mayer, J. W., Stritzker, B., White, C. W., and Appleton, B., Nuclear Instrum. and Methods 182/183, 97 (1981).Google Scholar
3. Mayer, J. W., Tsaur, B. Y., Lau, S. S., and Hung, L-S., Nuclear Instrum. and Methods 182/183, 1 (1981).Google Scholar
4. Poker, D. B., Radiation Effects (in press).Google Scholar
5. Angus, J. C., Mirtich, M. J., and Wintucky, E. G., Mat. Res. Soc. Symp. Proc. 7, 433 (1982).Google Scholar
6. Biersack, J. P., Nuclear Instruments and Methods 182/183, 199 (1981).Google Scholar
7. Biersack, J. P. and Haggmark, L. G., Nuclear Instruments and Methods 174, 257 (1980).Google Scholar
8. Nastasi, M., Hung, L. S., and Mayer, J. W., Appl. Phys. Lett. 43, 831 (1983).Google Scholar
9. Narayan, J., Fathy, D., Oen, O. S., and Holland, O. W., Materials Letters (in press).Google Scholar
10. Holland, O. W., Appleton, B. R., and Narayan, J., J. Appl. Phys. 54, 2295 (1983).Google Scholar
11. Fan, John C. C. and Anderson, Carl H. Jr., J. Appl. Phys. 52, 4003 (1981).Google Scholar
12. Fredrickson, J. E., Waddell, C. N., Spitzer, W. G., and Hubler, G. K., Appl. Phys. Lett. 40, 172 (1982).Google Scholar
13. Narayan, J. and Holland, O. W., Appl. Phys. Lett. 41, 239 (1982).Google Scholar
14. Averback, R. S., Proceedings of the Workshop on Ion Beam Mixing and Surface Layer Alloying, Albuquerque, April 15–16, 1983, SAND83–1230, p.10.Google Scholar
15. Matteson, S., Appl. Phys. Lett. 39, 288 (1981).Google Scholar
16. Sigmund, P. and Gras-Marti, A., Nuclear Instrum. and Methods 182/183, 25 (1981).Google Scholar
17. Hiraki, A., Nicolet, M-A., and Mayer, J. W., Appl. Phys. Lett. 18, 178 (1971).Google Scholar