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Dose and Doping Dependence of Damage Annealing in Fe Mev Implanted Inp

Published online by Cambridge University Press:  21 February 2011

A. Carnera
Affiliation:
INFM and Università di Padova, Dipartimento di Fisica, Via Marzolo 8,1-35131 Padova, Italy, [email protected]
B. Fraboni
Affiliation:
INFM and Università di Padova, Dipartimento di Fisica, Via Marzolo 8,1-35131 Padova, Italy, [email protected]
A. Gasparotto
Affiliation:
INFM and Università di Padova, Dipartimento di Fisica, Via Marzolo 8,1-35131 Padova, Italy, [email protected]
F. Priolo
Affiliation:
INFM and Università di Catania, Dipartimento di Fisica, C.so Italia 57,1-95129 Catania, Italy
A. Camporese
Affiliation:
CNR-ICTIMA, C.so Stati Uniti 4, 1-35127 Padova, Italy
G. Rossetto
Affiliation:
CNR-ICTIMA, C.so Stati Uniti 4, 1-35127 Padova, Italy
C. Frigeri
Affiliation:
CNR-MASPEC, Vía Chiavari 18/a, 1-43100 Parma, Italy
A. Cassa
Affiliation:
CNR-MASPEC, Vía Chiavari 18/a, 1-43100 Parma, Italy
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Abstract

High energy (2 MeV) ion implantation of Fe in InP has been investigated by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and secondary ions mass spectrometry (SIMS). The implanted doses ranged between 5×l013 and 5×l014 at/cm2. Annealing in the 650–800 °C range was performed and the primary as well as secondary damage evolution has been studied. The correlations between defect structure and Fe redistribution properties have been carefully analysed. The results show the role of the primary defect structure in determining the annealing properties, both for damage recovery and Fe redistribution. The latter is also influenced by the doping of the substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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