Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T02:29:22.614Z Has data issue: false hasContentIssue false
  • English
  • Français

The doping of a-Si:H with liquid boron and phosphorus sources

Published online by Cambridge University Press:  21 February 2011

M. Albert ,
K. Schade  and
W. Beyer
M. Albert
Affiliation:
Institut für Festkörperelektronik, TU Dresden, 0–8027 Dresden, FRG
K. Schade
Affiliation:
Institut für Festkörperelektronik, TU Dresden, 0–8027 Dresden, FRG
W. Beyer
Affiliation:
Institut für Festkörperelektronik, TU Dresden, 0–8027 Dresden, FRG
Get access

Abstract

The conductivity control of amorphous hydrogenated silicon (a-Si:H) by incorporation of electron donors or acceptors is prerequisite for the application of these layers in devices. The doping sources B2H6 and PH3 which are usually highly toxic are substituted by not dangerous boron and phosphorus liquid sources based on hydro-carbons. The avoidance of gas cylinders and expensive safety measure techniques is another advantage of these liquids.

In this paper we have studied the influence of boron, phosphorus and carbon on the electrical, photoelectrical and optical properties. The layers were produced in a capacitively coupled reactor in a silan-doping gas mixture. The maximum of the dark conductivities (300K) of the p- and n-type a-SiC.,:H layers was 10-5 and 103 (Ωcm)-1, respectively, the activation energys decreases to 0.4 and 0.2 eV respectively. With a high quantity within the range of doping gas in the mixture, the carbon determines the layer properties. At a gas mixture ratio of 1:1 ( silan: doping gas) the optical gap expands to 2.7 eV and the dark conductivity decreases below 10∼13 (Ωcm)-1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 105
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Spear, W.E. and Le Comber, P.G., Phil. Mag. 33, 935(1976).Google Scholar
[2] Hanidu, G.A., Banerjee, P.K., Klein, J.S. and Mitra, S.S., Springer Proc. Physics, 43, 127(1989.Google Scholar
[3] Gross, V., Grueninger, H.W., Niemann, E. and Fischer, R., J. Non-Cryst. Solids 97&98, 643(1987.CrossRefGoogle Scholar
[4] Nishikuni, M., Dohjoh, H., Ninomiya, K. et al., Springer Proc. Physics, 43, 54 (1989).CrossRefGoogle Scholar
[5] Gaughan, K., Hershold, S., Viner, J.M. and Taylor, P.C. in Amorphous Silicon Technoloqy-1991. edited by Madan, A., Hamakawa, Y., Thompson, M.J., Taylor, P.C. and LeComber, P.G. (Materials Research Society, Pittsburgh, 1991) pp. 697–702.Google Scholar
[6] Albert, M., Suchaneck, G., Stötzel, H., Schade, K. and Thiele, K.-H., Non-Crystalline Semiconductors-89. Proc. Abstracts III (UGU, Uzhgorod 1989) p. 139.Google Scholar
[7] Suchaneck, G., Albert, M. and Schade, K., Physika B 170, 574(1991).Google Scholar
[8] Suchaneck, G., Albert, M., Beyer, W., Stötzel, H. and Schade, K., J. Non-Cryst. Solids, 137&138, 701 (1991).Google Scholar
[9] Gmelin handbook of inorganic chemistry; Boron-E13 (Weinheim 1954), p. 217.Google Scholar
[10] Tawada, Y., Valency control of amorphous silicon carbide and its application to heteroiunction solar cells (Dissertation, Osaka University, 1982)Google Scholar