No CrossRef data available.
Article contents
Doping Efficiency and Deep Traps in MOCVD-Grown InGaAlP as Influenced by Stoichiometry and Hydrogen Passivation
Published online by Cambridge University Press: 22 February 2011
Abstract
It is shown that the low electrical activity of Zn in MOCVDgrown InGaAlP is related to hydrogen passivation during growth and that the effect is sensitive to growth conditions. We also discuss the results of hydrogen plasma treatment of p- and n-InGaAlP layers.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1994