Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-23T12:45:52.627Z Has data issue: false hasContentIssue false
  • English
  • Français

Doping Characteristics of Silver in Mg2Si1-xGex Prepared by Plasma Activated Sintering

Published online by Cambridge University Press:  01 February 2011

Takashi Nemoto ,
Junichi Sato ,
Tsutomu Iida ,
Masayasu Akasaka ,
Atsunobu Matsumoto ,
Tadao Nakajima ,
Keishi Nishio  and
Yoshifumi Takanashi
Takashi Nemoto
Affiliation:
[email protected], Nippon Thermostat Co., Ltd, R&D Dept, 6-59-2 Nakazato, Kiyose-shi Tokyo, 204-0003, Japan
Junichi Sato
Affiliation:
[email protected], Nippon Thermostat Co., Ltd., 6-59-2 Nakazato, Kiyose-shi, Tokyo, 204-0003, Japan
Tsutomu Iida
Affiliation:
[email protected], Tokyo University of Science, Department of Materials Science and Technology, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
Masayasu Akasaka
Affiliation:
[email protected], Tokyo University of Science, Department of Materials Science and Technology, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
Atsunobu Matsumoto
Affiliation:
[email protected], Tokyo University of Science, Department of Materials Science and Technology, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
Tadao Nakajima
Affiliation:
[email protected], Nippon Thermostat Co., Ltd., 6-59-2 Nakazato, Kiyose-shi, Tokyo, 204-0003, Japan
Keishi Nishio
Affiliation:
[email protected], Tokyo University of Science, Department of Materials Science and Technology, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
Yoshifumi Takanashi
Affiliation:
[email protected], Tokyo University of Science, Department of Materials Science and Technology, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
Get access

Abstract

Silver (Ag) doped Mg2Si1-xGex (x=0.1 to 0.4) samples were fabricated using a plasma activated sintering (PAS) method. The doping concentration of Ag was varied from 1 to 5 at.%. Undoped Mg2Si1-xGex exhibits n-type conductivity due to residual impurities in the Mg source material used and unintentionally process-induced impurities. The observed unstable behavior of the Seebeck coefficient of Ag-doped p-type Mg2Si1-xGex (x ≤ 0.3) in the region of 550 to 650 K, exhibiting a considerable drop in the value and occasional conduction type conversion, was correlated with the specific contaminants. For x∼0.4, the observed Seebeck coefficient varied from 0.2 mV/K at 823 K to 0.4 mV/K at room temperature, with no remarkable drop in the value with increasing temperature. An estimated ZT value of 5 at.% Ag doped Mg2Si0.6Ge0.4 was 0.18 at 844 K. It was found that both specific residual impurities and process-induced impurities affected the characteristics of the Seebeck coefficient of Mg2Si1-xGex.

Keywords

thermoelectricityMgSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1044: Symposium U – Thermoelectric Power Generation , 2007 , 1044-U06-14
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Morris, R.G., Redin, R.D. and Danielson, G.C., Phys. Rev. 109, 1909 (1958).Google Scholar
2. LaBotz, R.J., Mason, D.R., O'kane, D.F., J. Electrochem. Soc. 110, 127 (1963).Google Scholar
3. Lee, P.M., Phys. Rev., vol. 135(4A), 1110 (1964).Google Scholar
4. Borisenko, V.E (Ed.), Semiconducting Silicides, Springer, Berlin, 285 (2000).Google Scholar
5. Noda, Y., Kon, H., Furukawa, Y., Otsuka, N., Nishida, I.A., Masumoto, K., Mater. Trans. JIM 33, 845 (1992).Google Scholar
6. Noda, Y., Kon, H., Furukawa, Y., Otsuka, N., Nishida, I.A., Masumoto, K., Mater. Trans. JIM 33, 851 (1992).Google Scholar
7. Akasaka, M., Iida, T., Nishio, K., Takanashi, Y., Thin Solid Films, 515, 8237 (2007).Google Scholar
8. Fukano, M., Iida, T., Akasaka, M., Takanashi, Y., Unpublished.Google Scholar
9. Akasaka, M., Iida, T., Nemoto, T., Soga, J., Sato, J., K.Makino, Fukano, M., Takanashi, Y., Journal of Crystal Growth, 304, 196 (2007).Google Scholar
10. Tani, J., Kido, H., Physica, B364, 218 (2005).Google Scholar