Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T15:46:18.790Z Has data issue: false hasContentIssue false
  • English
  • Français

Doping and Alloying Trends in New Thermoelectric Materials

Published online by Cambridge University Press:  21 March 2011

Sim Loo ,
Sangeeta Lal ,
Theodora Kyratsi ,
Duck-Young Chung ,
Kuei-Fang Hsu ,
Mercouri G. Kanatzidis  and
Timothy P. Hogan
Sim Loo
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI
Sangeeta Lal
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI
Theodora Kyratsi
Affiliation:
Chemistry Department, Michigan State University, East Lansing, MI
Duck-Young Chung
Affiliation:
Chemistry Department, Michigan State University, East Lansing, MI
Kuei-Fang Hsu
Affiliation:
Chemistry Department, Michigan State University, East Lansing, MI
Mercouri G. Kanatzidis
Affiliation:
Chemistry Department, Michigan State University, East Lansing, MI
Timothy P. Hogan
Affiliation:
Chemistry Department, Michigan State University, East Lansing, MI
Get access

Abstract

New thermoelectric bulk materials such as CsBi4Te6 have shown superior properties to traditional materials, however, optimal performance requires continuing investigations of doping and alloying trends. A recently modified high throughput measurement system is presented for doping and alloying investigations in several new thermoelectric materials. The modification includes a four-probe configuration for more accurate measurements while maintaining a relatively short sample preparation time. The system is fully computer controlled and provides flexible contacts to accommodate various sample dimensions. Optimal compositions are then identified for further investigations in thermoelectric prototype modules. The most promising materials will be further characterized for electrical conductivity, thermoelectric power, thermal conductivity, and Hall effect measurements as a function of temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G3.4
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kanatzidis, M., et al. , “Thermoelectric Materials: Solid State Synthesis,” Naval Res. Rev., Vol. 48, No. 4 (1996).Google Scholar
2 Kanatzidis, M. G., “Thermoelectricity,” Semiconductors and Semimetals, Vol. 171, (2001).Google Scholar
3 Hogan, T., et al. , “Measurement System for Doping and Alloying Trends In New Thermoelectric Materials,” Mat. Res. Soc. Symp. Proc., Vol. 545 (1999).Google Scholar
4 Chung, Duck-Young, et al. , “CsBi4Te6: A High-Performance Thermoelectric Material for Low-Temperature Application,” Science, Vol. 287, pp. 1024–1027 (2000).Google Scholar