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Dopant Site Location by Electron Channeling in Ion Implanted Silicon*

Published online by Cambridge University Press:  21 February 2011

S. J. Pennycook ,
J. Narayan  and
O.W. Holland
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
O.W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

A simple ratio technique using the phenomenon of electron channeling can be used to measure the substitutional concentrations of dopants in semiconductors on a submicron scale.A comparison was made between electron and ion channeling measurements on Si-Sb alloy samples having a range of nonsubstitutional fractions of Sb.Good agreement was obtained but both measurements indicated considerably more nonsubstitutional dopant than could be accounted for by precipitates observed in electron micrographs. The discrepancy can be explained if the precipitates are coherent in the early stages of growth and have their planes located interstitially with respect to the Si planes. The sensitivity of the electron channeling measurements to the implantation profile was investigated and found to be small.The determination of local dopant profiles in the electron microscope is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 97
Copyright
Copyright © Materials Research Society 2006

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Footnotes

*

Research sponsored by the Division of materials Sciences, U. S. Department of Energy under contract W–7405–eng–26 with Union Carbide Corporation.

References

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