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Dopant Quantification By X-Ray Absorption Spectroscopy: Zn IN InP

Published online by Cambridge University Press:  15 February 2011

L. Niu ,
R. F. Karlicek ,
M. Geva  and
P. H. Citrin
L. Niu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974 and Breiningsville, PA 18031
R. F. Karlicek
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974 and Breiningsville, PA 18031
M. Geva
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974 and Breiningsville, PA 18031
P. H. Citrin
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974 and Breiningsville, PA 18031
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Abstract

X-ray absorption spectroscopy has been applied to layered Zn-doped InP structures containing systematically varying amounts of Zn spanning a factor of -40. The structures, similar to those used in optoelectronic laser devices, were characterized with x-ray absorption spectroscopy and SIMS to determine quantitatively the Zn concentrations. In addition to being non-destructive, the former technique was shown to be substantially more precise. A well-defined concentration regime is established in which substitutionally occupied Zn is directly proportional to Zn exposure during growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 509
Copyright
Copyright © Materials Research Society 1996

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