Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-16T17:27:06.112Z Has data issue: false hasContentIssue false
  • English
  • Français

Dopant Activation in Boron-Doped a-Si:H and a-SiC:H by Thermal Annealing and Light-Soaking

Published online by Cambridge University Press:  15 February 2011

Masao Isomura ,
Yoshihiro Hishikawa  and
Shinya Tsuda
Masao Isomura
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Yoshihiro Hishikawa
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Shinya Tsuda
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd., 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Get access

Abstract

The effects of thermal history and light-soaking are systematically studied on boron-doped a-Si:H and a-SiC:H. Light-soaking increases dark conductivity at a low carbon content but decreases it at a high carbon content. This reaction is reversible, and the dark conductivity recovers to the initial value with thermal annealing. The effect of thermal history is also influenced by carbon content in samples deposited at a relatively low temperature (110°C). The increase in dark conductivity occurs with thermal annealing at a higher temperature than the deposition temperature at a high carbon content. But this effect is not significant at a low carbon content. These phenomena can be explained by the hydrogen passivation of four-fold boron, and the hydrogen motion and trapping in the network. The present model suggests that a microstructure containing deep traps of mobile hydrogen contributes to improvement in the stability of a-Si:H and its alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 541
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
[2] Stutzmann, M., Philos. Mag. B 60, 531 (1989).Google Scholar
[3] See, for example, Stability of Amorphous Silicon Alloy Materials and Devices. AIP Conf. Proc. Vol. 157 (AIP, New York, 1987).Google Scholar
[4] Staebler, D.L. and Wronski, C.R., J. Appl. Phys. 51, 3262 (1980).Google Scholar
[5] Aker, B. and Fritzsche, H., J. Appl. Phys. 54, 6628 (1983).Google Scholar
[6] Jang, J., Park, S.C., Kim, S.C. and Lee, C., Appl. Phys. Lett. 51, 1804 (1987).Google Scholar
[7] Jakson, W.B., Phys. Rev. B 41, 12323 (1990).Google Scholar
[8] Street, R.A., Kakalios, J., Tsai, C.C. and Hayes, T.M., Phys. Rev. B 35, 1316 (1987).Google Scholar
[9] Street, R.A., Tsai, C.C., Kakalios, J. and Jackson, W.B., Phil. Mag. B 56, 305 (1987).Google Scholar
[10] Pankove, J.I, Zanzucchi, P.J., Magee, C.W. and Lucovsky, G., Appl. Phys. Lett. 46, 421 (1985).Google Scholar
[11] Jackson, W.B., Tsai, C.C. and Santos, P.V., Mat. Res. Soc. Symp. Proc. Vol. 258 (Materials Research Society, Pittsburg PA, 1992), p. 319.Google Scholar
[12] Nakamura, N., Takahama, T., Isomura, M., Nishikuni, M., Yoshida, K., Tsuda, S., Nakano, S., Ohnishi, M. and Kuwano, Y., Jpn. J. Appl. Phys. 28, 1762 (1989).Google Scholar
[13] Nickel, N.H., Jackson, W.B. and Johnson, N.M., Phys. Rev. Lett. 71, 2733 (1993).Google Scholar