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Donor–Doped Lead Zirconate Titanate (PbZr1−xTixO3) Films

Published online by Cambridge University Press:  15 February 2011

Seshu B. Desu ,
Dilip P. Vijay  and
In K. Yoo
Seshu B. Desu
Affiliation:
Department of Materials Science and Engineering Virginia Polytechnic Institute and State University Blacksburg, Virginia 24061.
Dilip P. Vijay
Affiliation:
Department of Materials Science and Engineering Virginia Polytechnic Institute and State University Blacksburg, Virginia 24061.
In K. Yoo
Affiliation:
Department of Materials Science and Engineering Virginia Polytechnic Institute and State University Blacksburg, Virginia 24061.
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Abstract

Properties of undoped– and doped–ferroelectric PbZr1−xTixO3. films, with both Pt or RuO2 electrodes, were compared, with a view to understand the reasons for degradation of ferroelectric films. Donor–doped (e.g., Nb5+ at Ti4+ site) PbZr1−xTixO3 films, for which the PbO loss has been compensated, showed higher resistance to fatigue and low leakage currents compared to those of undoped films. The fatigue of ferroelectric films, a decrease in switchable polarization with increasing number of polarization reversals, has been attributed to the migration of oxygen vacancies and their entrapment at various interfaces (e.g., electrode/ferroelectric interface) that are present in the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 53
Copyright
Copyright © Materials Research Society 1994

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References

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